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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1589 DESCRIPTION With TO-220Fa package DARLINGTON Complement to type 2SB1098 Low speed switching APPLICATIONS Low frequency power amplifier Low speed switching industrial use PINNING PIN 1 2 3 DESCRIPTION Base Collector Fig.1 simplified outline (TO-220Fa) and symbol Emitter Absolute maximum ratings(Ta=25ae ) SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER INC Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-Peak Base current (DC) E SEM ANG H OND IC CONDITIONS TOR UC VALUE 150 100 7 5 8 0.5 UNIT V V V A A A Open emitter Open base Open collector Ta=25ae PC Collector power dissipation TC=25ae Tj Tstg Junction temperature Storage temperature 1.5 W 20 150 -55~150 ae ae Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25ae unless otherwise specified PARAMETER CONDITIONS MIN TYP. 2SD1589 SYMBOL MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A , IB=0 60 V VCEsat VBEsat Collector-emitter saturation voltage IC=3A ;IB=3mA IC=3A; IB=3mA 1.5 V Base-emitter saturation voltage 2.0 V ICBO Collector cut-off current VCB=100V ;IE=0 1 |I A hFE-1 DC current gain IC=3A ; VCE=2V 2000 15000 hFE-2 DC current gain IC=5A ; VCE=2V 500 Switching times ton ts tf Turn-on time Fall time Storage time hFE Classifications R 2000-5000 O CHA IN 3000-7000 E SEM NG Y 5000-15000 IC=3A ;IB1=3mA IB2=-3mA; VCCO 50V RL=16.7| OND IC TOR UC 1.0 3.5 |I 1.2 |I s s |I s 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1589 CHA IN E SEM NG OND IC TOR UC Fig.2 Outline dimensions (unindicated tolerance:A 0.15 mm) 3 |
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